型号 PSMN070-200P,127
厂商 NXP Semiconductors
描述 MOSFET N-CH 200V 35A SOT78
PSMN070-200P,127 PDF
代理商 PSMN070-200P,127
标准包装 1,000
系列 TrenchMOS™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 200V
电流 - 连续漏极(Id) @ 25° C 35A
开态Rds(最大)@ Id, Vgs @ 25° C 70 毫欧 @ 17A,10V
Id 时的 Vgs(th)(最大) 4V @ 1mA
闸电荷(Qg) @ Vgs 77nC @ 10V
输入电容 (Ciss) @ Vds 4570pF @ 25V
功率 - 最大 250W
安装类型 通孔
封装/外壳 TO-220-3
供应商设备封装 TO-220AB
包装 管件
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